Study of gain improvement in a low noise amplifier

被引：0

作者：

Son, JH ^{[1
]}

Kim, DY ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Div Elect & Informat Engn, Jeonju 561756, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 43卷 / 01期

关键词：

LNA; CMOS;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We design a high-gain low noise amplifier (LNA) by applying a 0.25 mum CMOS process for Bluetooth. Using a cascade inverter, we design a one-stage amplifier that uses a reference power supply without a choke inductor. An existing one-stage LNA was an improved structure having a low, power gain of 10 similar to 15 dB. The designed 2.4-GHz LNA has a noise figure (NF) of 2.2 dB and a high power gain of 21 dB.

引用

页码：L1 / L3

页数：3

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