A novel correlative model of failure mechanisms for evaluating MEMS devices reliability

被引：3
|
作者：
Li, Yaqiu [1 ]
Sun, Yufeng [1 ]
Hu, Weiwei [1 ]
Wang, Zili [1 ]
机构：
[1] Beihang Univ, Reliabil & Syst Engn Sch, Beijing, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2016年 / 64卷
关键词：
Correlative model; MEMS; Failure mechanism; Reliability evaluation; DEGRADATION; FATIGUE;
D O I：
10.1016/j.microrel.2016.07.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The failure behavior of MEMS can be regarded as the result of certain dependent failure mechanisms in accordance with device's internal attributes and external environment. However, the correlative effects among multiple mechanisms governing the failure process of MEMS have not been well characterized. This paper reviews significant failure mechanisms of MEMS products and proposes a new correlative model for MEMS reliability evaluation. Based on the nature of different failure mechanisms, dependent factors of these correlations are discussed and mathematical models are derived. With a case, reliability of a sort of RF switch is evaluated taking into account the failure mechanism correlative effects, and sensitivity analysis is conducted to assess the effects of the model parameters on reliability function R(t) and failure probability density function At). (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：669 / 675
页数：7
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