A Single Photon Avalanche Detector in a 180 nm standard CMOS technology

被引：0
|
作者：
Malass, Imane [1 ]
Uhring, Wilfried
Le Normand, Jean-Pierre
Dumas, Norbert
Dadouche, Foudil
机构：
[1] Univ Strasbourg, ICube, UMR 7357, 23 Rue Loess, F-67037 Strasbourg, France
来源：
2015 IEEE 13TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2015年
关键词：
Single Photon Avalanche Diode; SPAD; Photodetector; Avalanche Photodiodes; CMOS image sensor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
we present the performance characteristics of a Single Photon Avalanche Detector fabricated in a 180 nm standard CMOS image sensor technology. The SPAD implemented in 8 different diameters between 5 mu m and 40 mu m shows a DCR below 10 kHz at 15 degrees C with a low afterpulsing probability (0.2% at 300 mV), a good photodetection efficiency (20%) and a very good time resolution (80 ps at 450 nm).
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页数：4
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