Understanding the effect of inelastic electron-phonon scattering and channel inhomogeneities on a nanowire FET

被引:7
|
作者
Sarkar, Niladri [1 ]
机构
[1] Birla Inst Technol & Sci, Dept Phys, Pilani 333031, Rajasthan, India
关键词
Ballistic transport; Self-consistent NEGF procedure; Electron-phonon interaction; Channel inhomogeneity; TRANSISTOR; MODEL;
D O I
10.1016/j.spmi.2017.12.032
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using self-consistent Non-Equilibrium Green's Function formalism, the effect of the inelastic scattering due to electron-phonon interaction on the transfer and output characteristics of a coaxially gated generic nanowire field effect transistor has been studied in detail. The scattering strength Do is varied from 0.003 eV(2) to 0.3 eV(2). There is change in the threshold voltage and suppression of channel current with increasing scattering strength. We also studied the effect of channel inhomogeneities on electron energy. The channel inhomogeneities are invoked by introducing potential step inside the channel. We study the energy relaxation due to inelastic scattering and channel inhomogeneities by comparing the normalized terminal current per energy for the source and drain terminals. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:183 / 191
页数:9
相关论文
共 50 条
  • [1] Ballistic Performance Study of Nanowire FET: Effect of Channel Materials and Phonon Scattering
    Iztihad, Hossain Md.
    Khan, Touhid
    Abu Sufian
    Alam, Md. Nur Kutubul
    Mollah, Md. Nurunnabi
    Islam, Md. Rafiqul
    [J]. INTERNATIONAL JOURNAL OF NANOSCIENCE, 2016, 15 (03)
  • [2] Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature
    Tsuchida, I.
    Seike, A.
    Takai, H.
    Masuda, J.
    Kosemura, D.
    Ogura, A.
    Watanabe, T.
    Ohdomari, I.
    [J]. PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, 2009, 25 (06): : 439 - 443
  • [3] Electron-phonon coupling effects explored by inelastic neutron scattering
    Pintschovius, L
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (01): : 30 - 50
  • [4] MEASUREMENTS OF ELECTRON-PHONON INTERACTION IN NB BY INELASTIC NEUTRON-SCATTERING
    SHAPIRO, SM
    SHIRANE, G
    AXE, JD
    [J]. PHYSICAL REVIEW B, 1975, 12 (11): : 4899 - 4908
  • [5] INFLUENCE OF THE INELASTIC ELECTRON-PHONON SCATTERING ON THE SUPERCONDUCTING SURFACE-RESISTANCE
    BLASCHKE, R
    BLOCKSDORF, R
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1982, 49 (02): : 99 - 108
  • [6] ELECTRON-PHONON INTERACTIONS IN CADMIUM MEASURED BY INELASTIC NEUTRON-SCATTERING
    CHERNYSHOV, AA
    PUSHKAREV, VV
    RUMYANTSEV, AY
    DORNER, B
    PYNN, R
    [J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1979, 9 (10): : 1983 - 1995
  • [7] Size and temperature dependence of the electron-phonon scattering by donors in nanowire transistors
    Bescond, M.
    Carrillo-Nunez, H.
    Berrada, S.
    Cavassilas, N.
    Lannoo, M.
    [J]. SOLID-STATE ELECTRONICS, 2016, 122 : 1 - 7
  • [8] Electron-Phonon Coupling and Electron-Phonon Scattering in SrVO3
    Mirjolet, Mathieu
    Rivadulla, Francisco
    Marsik, Premysl
    Borisov, Vladislav
    Valenti, Roser
    Fontcuberta, Josep
    [J]. ADVANCED SCIENCE, 2021, 8 (15)
  • [9] ELECTRON-PHONON SCATTERING IN POLYPARAPHENYLENE
    MENENDEZ, C
    GUINEA, F
    [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 2183 - 2190
  • [10] ELECTRON-PHONON SCATTERING IN POLYACETHYLENE
    GUINEA, F
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02): : 241 - 249