High-efficiency class-C power-amplifier module

This paper presents the design of a high-efficiency LDMOS power-amplifier module (PAM) at the 880-MHz band. The nonlinear parameters for the LDMOS FET ore obtained through the modified SPICE level-3 static and large-signal analyses. It shows all output power of 30.2 dBm and power-added efficiency (PAE) of 64%, with a transducer power gain of 28.78 dB. In this paper, the harmonic-trap network (HTN) is introduced to maximize the PAE and the winding transmission line (WTL) is adopted to obtain the optimizing output matching point between the output power and PAE. (C) 2004 Wiley Periodicals, Inc.