A novel MOSFET gate driver for the complementary Class D Converter

被引：6
|
作者：
Nerone, LR [1 ]
机构：
[1] GE Lighting, Cleveland, OH 44112 USA
来源：
APEC'99: FOURTEENTH ANNUAL APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, CONFERENCE PROCEEDINGS, VOLS 1 & 2 | 1999年
关键词：
D O I：
10.1109/APEC.1999.750454
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The MOSFET Gate Driver (MGD) Has many applications in power electronics, The common MGD needs a high voltage level-shifter to drive the high-side switch, Level-shifting impairs speed and consumes a large area of the die. This paper introduces a never MGD that works with a complementary Class D Converter. Void of level shifting, this low voltage IC is fast, does not require a bootstrap circuit and is less costly to manufacture.
引用
收藏
页码：760 / 763
页数：2
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