Simulation of CIGS based solar cells with SnO2 window layer using SCAPS-1D

被引：3
|
作者：
Rihana [1 ]
Ahmed, Sumair Faisal [1 ]
Khalid, Muhammad [1 ]
机构：
[1] Jamia Millia Islamia, Cent Instrumentat Facil CIF, New Delhi 110025, India
来源：
2019 INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, CONTROL AND AUTOMATION (ICPECA-2019) | 2019年
关键词：
CIGS; ZnSe; SnO2; SCAPS-1D;
D O I：
10.1109/icpeca47973.2019.8975461
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, Cu(In,Ga)Se-2 (CIGS) with the high efficiency based thin film solar cells has been simulated by SCAPS-1D software. CIGS being promising material for large scale photovoltaic application. We have optimized on the implementation of the Mu/CIGS/ZnSe/SnO2 thin film solar cells. In this structure, window layer (SnO2) band gap effect on solar cell parameters short-circuit current density (J(sc), open circuit voltage (V-0c), fill factor (FF), and efficiency of CIGS solar cell have been used for better performance. The simulation results of structure, enhanced efficiency of 13.85% was observed, while J(sc), V-oc and FE are 21.08 mA/cm(2), 0.8242 V, and 79.70%, respectively.
引用
收藏
页码：82 / 85
页数：4
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