Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques

被引：0
|
作者：
Zade, D. [1 ]
Kakushima, K. [2 ]
Kanda, T. [1 ]
Lin, Y. C. [3 ]
Ahmet, P. [1 ]
Tsutsui, K. [2 ]
Nishiyama, A. [2 ]
Sugii, N. [2 ]
Chang, E. Y. [3 ]
Natori, K. [1 ]
Hattori, T. [1 ]
Iwai, H. [1 ]
机构：
[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Eng, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期
关键词：
High-k; InGaAs; Interface state density; Bulk trap; Frequency dispersion;
D O I：
10.1016/j.mee.2011.03.068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 degrees C, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the HfO2 thickness. Cross-sectional transmission electron microscopy images have revealed that the formation of mesoscopic voids in the InGaAs substrate near the interface is suppressed with HfO(2)deposition at 300 degrees C at the interface. A band diagram with an additional bulk trap energy level has been proposed to explain the frequency dispersion and conductance peaks at accumulation condition. (c) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1109 / 1112
页数：4
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