Improving Ion/Ioff in dual-gate graphene nanoribbon field-effect transistors using local uniaxial tensile strain

被引：6

作者：

Moslemi, Mohammad Reza ^{[1
]}

Moravej-Farshi, Mohammad Kazem ^{[2
]}

Sheikhi, Mohammad Hossein ^{[3
]}

机构：

[1] Islamic Azad Univ, Dept Elect Engn, Zarghan Branch, Zarghan, Iran

[2] TMU, Fac Elect & Comp Engn, ADSL, Tehran 1411713116, Iran

[3] Shiraz Univ, Sch Elect & Comp Engn, Dept Elect & Commun, Shiraz, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2015年 / 68卷

关键词：

Graphene Nanoribbon Field Effect Transistor (GNRFET); Ambipolarity; Band to Band Tunneling; Drain Induced Barrier Lowering (DIBL); Non Equilibrium Green's Function (NEGF); Short Channel Effects; Uniaxial Tensile Strain;

D O I：

10.1016/j.physe.2014.12.032

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we present the Dual-Gate Graphene Nano Ribbon Field Effect Transistor (DG-GNRFET) under local uniaxial strain in source and drain regions as a device suitable for switching applications. Our investigations are based on the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). We show a high on-current and on-off ratio which can be obtained using the combination of techniques such as applying uniaxial strain to the portion of channel/source regions and the gate overlap. We followed an optimization process to find the best performance of the device. Finally, the proposed device shows a higher on-current and on-off ratio becomes about 100 times greater than of the unstrained device. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：143 / 148

页数：6

共 50 条

[1] Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects
Nazari, Atefeh
Faez, Rahim
Shamloo, Hassan
SUPERLATTICES AND MICROSTRUCTURES, 2015, 86 : 483 - 492
[2] Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors
Zhang, Jian
Barin, Gabriela Borin
Furrer, Roman
Du, Cheng-Zhuo
Wang, Xiao-Ye
Muellen, Klaus
Ruffieux, Pascal
Fasel, Roman
Calame, Michel
Perrin, Mickael L.
NANO LETTERS, 2023, 23 (18) : 8474 - 8480
[3] Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors
Kliros, George S.
NANOSCALE RESEARCH LETTERS, 2014, 9 : 1 - 11
[4] Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors
George S Kliros
Nanoscale Research Letters, 9
[5] Dual-gate ion-sensitive field-effect transistors: A review
Bhatt, Deepa
Panda, Siddhartha
ELECTROCHEMICAL SCIENCE ADVANCES, 2022, 2 (06):
[6] Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric
Tahereh Radsar
Hassan Khalesi
Vahid Ghods
Journal of Computational Electronics, 2020, 19 : 1507 - 1515
[7] Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric
Radsar, Tahereh
Khalesi, Hassan
Ghods, Vahid
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (04) : 1507 - 1515
[8] Effect of Uniaxial Strain on the Current-Voltage Characteristics of Graphene Nanoribbon Field-Effect Transistors
Kliros, George S.
2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 2013, : 27 - 30
[9] A dual-gate field-effect transistor in graphene heterojunctions
Guo, Lingling
Zhang, Qingtian
Chan, Kwok Sum
SUPERLATTICES AND MICROSTRUCTURES, 2021, 150 (150)
[10] Device characteristics of polymer dual-gate field-effect transistors
Maddalena, F.
Spijkman, M.
Brondijk, J. J.
Fonteijn, P.
Brouwer, F.
Hummelen, J. C.
de Leeuw, D. M.
Blom, P. W. M.
de Boer, B.
ORGANIC ELECTRONICS, 2008, 9 (05) : 839 - 846

← 1 2 3 4 5 →