Defects in low nitrogen-doped highly oriented diamond film grown by microwave plasma-assisted chemical vapor deposition

被引：4

作者：

Liu, Yan-Yan

Zhang, Qing-Yu ^{[1
]}

Bauer-Grosse, Elizabeth

机构：

[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China

[2] Ecole Mines, UMR 7570, Lab Sci & Genie Surfaces, F-54042 Nancy, France

来源：

SCRIPTA MATERIALIA | 2008年 / 58卷 / 02期

关键词：

CVD; carbon; dislocation; transmission electron microscopy;

D O I：

10.1016/j.scriptamat.2007.09.031

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A diamond film was deposited using a two-step process in which nitrogen is added during the second step. We compare the defects in {001} and {111} growth sectors from the two-steps: dislocation loops found in {001} growth sectors of the first step disappear in {001} growth sectors with N-doping, whereas the density of planar defects in {111} growth sectors strongly increases. It is suggested that N-doping stops vacancies from aggregating to form dislocation loops or vacancy clusters. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：103 / 105

页数：3

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