New approach to modeling the microwave transistors MESFET and HEMT

被引：0
|
作者：
Touhami, R
Yagoub, MCE
Baudrand, H
机构：
[1] USTHB, Inst Elect, Dept Elect Syst, Lab Instrumentat, Bab Ezzouar 16111, Alger, Algeria
[2] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
[3] ENSEEIHT, Elect Lab, Grp Rech Electromagnetisme, F-31071 Toulouse, France
来源：
CANADIAN JOURNAL OF PHYSICS | 2001年 / 79卷 / 08期
关键词：
D O I：
10.1139/cjp-79-8-1075
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The authors present an analytical model of current drain-source based on the one established by Chalmers. As the precision of parameters is directly bound to the measured maximal value of the transconductance, a precision level of 25% is obtained. To improve this precision, the combined optimization algorithm with the Chalmers model is elaborated. The results obtained are very satisfactory. For a mathematical function psi, with three terms in the saturated region, the influence of the temperature represents correctly the drain current for the voltage near a pinch-off voltage.
引用
收藏
页码：1075 / 1084
页数：10
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