Impact of the Elemental Makeup of an IC in Generating Single-Event Upsets From Low-Energy (< 10 MeV) Neutrons: A 3-D NAND Flash Case Study

被引：3

作者：

Conway, Peter M. ^{[1
]}

Gadlage, Matthew J. ^{[1
]}

Ingalls, James D. ^{[1
]}

Williams, Aaron M. ^{[1
]}

Bruce, David I. ^{[1
]}

Bossev, Dobrin P. ^{[1
]}

机构：

[1] Naval Surface Warfare Ctr Crane Div, Dept Global Deterrence & Def, Crane, IN 47522 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 01期

关键词：

Flash memories; integrated circuits; neutron radiation effects; radiation effects; single event latchup; space radiation;

D O I：

10.1109/TNS.2018.2885847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron-induced single event upsets (SEUs) have become a significant reliability concern for advanced electronics. Ever-shrinking device sizes and the introduction of new elements in state-of-the-art integrated circuits (ICs) have increased device neutron SEU susceptibility. Various elements found in ICs each have a role in producing SEUs from low-energy neutrons (sub-10 MeV). This paper explores the role these elements play in a case study of a state-of-the-art 3-D NAND flash.

引用

页码：466 / 473

页数：8