TCAD Modeling and Simulation of Non-Resonant Plasmonic THz Detector Based on Asymmetric Silicon MOSFETs

被引：0
|
作者：
Ryu, Min Woo [1 ]
Lee, Jeong Seop [1 ]
Park, Kibog [1 ]
Kim, Kyung Rok [1 ]
Park, Wook-Ki [2 ]
Han, Seong-Tae [2 ]
机构：
[1] Ulsan Natl Inst Sci & Technol UNIST, Sch Elect & Comp Engn, Ulsan 689798, South Korea
[2] Korea Electrotechnol Res Inst KERI, Adv Med Device Res Ctr, Ansan 426910, Gyeonggi, South Korea
来源：
2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013) | 2013年
关键词：
plasmonic terahertz wave; nonresonant regime; silicon FET detector; responsivity; asymmetry ratio; TERAHERTZ RADIATION;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (R-V) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on R-V, FET structure with the asymmetric source and drain area under the gate has been proposed. The enhanced R-V according to the increase of asymmetry ratio between source and drain region has been confirmed experimentally.
引用
收藏
页码：200 / 203
页数：4
相关论文
共 15 条
  • [1] Photoresponse enhancement of plasmonic terahertz wave detector based on asymmetric silicon MOSFETs with antenna integration
    Ryu, Min Woo
    Lee, Jeong Seop
    Park, Kibog
    Park, Wook-Ki
    Han, Seong-Tae
    Kim, Kyung Rok
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [2] TCAD modeling and simulation of sub-100nm gate length silicon and GaN based SOI MOSFETs
    Ma, Lei
    Jin, Yawei
    Zeng, Chang
    Dandu, Krishnanshu
    Johnson, Mark
    Barlage, Doug William
    [J]. TRANSISTOR SCALING- METHODS, MATERIALS AND MODELING, 2006, 913 : 191 - +
  • [3] Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector
    Ahn, Sang Hyo
    Ryu, Min Woo
    Jang, Esan
    Jeon, Hyeong Ju
    Kim, Kyung Rok
    [J]. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2017, 2017-September : 297 - 300
  • [4] Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector
    Ahn, Sang Hyo
    Ryu, Min Woo
    Jang, Esan
    Jeon, Hyeong Ju
    Kim, Kyung Rok
    [J]. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 297 - 300
  • [5] New Non-Quasi-Static (NQS) Compact Model for Non-Resonant Plasmonic Terahertz Wave Detector based on Field-Effect Transistor
    Ryu, Min Woo
    Ahn, Sang Hyo
    Kim, Kwan Sung
    Kim, Kyung Rok
    [J]. 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, : 202 - 203
  • [6] High-Performance Plasmonic THz Detector Based on Asymmetric FET With Vertically Integrated Antenna in CMOS Technology
    Ryu, Min Woo
    Lee, Jeong Seop
    Kim, Kwan Sung
    Park, Kibog
    Yang, Jong-Ryul
    Han, Seong-Tae
    Kim, Kyung Rok
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (04) : 1742 - 1748
  • [7] Modeling and Simulation of THz detectors based on electrical resonant metamaterial micro-nano-structures
    Ji, Hongwu
    Luo, Jun
    Zhang, Xinyu
    Sang, Hongshi
    Xie, Changsheng
    [J]. MIPPR 2013: MULTISPECTRAL IMAGE ACQUISITION, PROCESSING, AND ANALYSIS, 2013, 8917
  • [8] Plasmonic Terahertz Wave Detector Based on Silicon Field-Effect Transistors with Asymmetric Source and Drain Structures
    Ryu, Min Woo
    Park, Kibog
    Park, Wook-Ki
    Han, Seong-Tae
    Kim, Kyung Rok
    [J]. 2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2013, : 97 - +
  • [9] TCAD Simulation, Small-Signal and Noise Modeling of Si Based Bandgap Engineered Semiconductor Device for Near THz Applications
    Kumar, Pradeep
    Chauhan, R. K.
    Gupta, Monika
    [J]. 2014 FOURTH INTERNATIONAL CONFERENCE ON ADVANCED COMPUTING AND COMMUNICATION TECHNOLOGIES (ACCT 2014), 2014, : 144 - +
  • [10] Enhanced machinability of aluminium-based silicon carbide by non-resonant vibration-assisted magnetorheological finishing
    Gu, Yan
    Li, Zhen
    Lin, Jieqiong
    Zhou, Xiaoqin
    Xu, Zisu
    Zhou, Weidong
    Zhang, Sen
    Gao, Yinghuan
    [J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2024, 324
12