Effect of oxygen vacancy concentration on domain switching of Bi3.15Nd0.85Ti3O12

被引：10
|
作者：
Huang, H. [1 ]
Zhong, X. L.
Xie, S. H.
Zhang, Y.
Wang, J. B.
Zhou, Y. C.
机构：
[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China
来源：
EPL | 2011年 / 94卷 / 03期
基金：
中国国家自然科学基金;
关键词：
PIEZORESPONSE FORCE MICROSCOPY; THIN-FILMS; FERROELECTRIC MEMORIES; FATIGUE;
D O I：
10.1209/0295-5075/94/37002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Bi3.15Nd0.85Ti3O12 (BNT) thin films with different oxygen vacancy concentrations were prepared by annealing in air and nitrogen atmospheres. The effects of oxygen vacancy concentration on microstructures and domain switching of BNT thin films were investigated. It is found that the film annealed in air atmosphere possesses higher crystallinity, larger grain size, better electrical properties and more complete domain switching than those of the film annealed in nitrogen atmosphere. The results demonstrate that oxygen vacancies play a significant role in domain switching and in the electrical properties of BNT films, and low oxygen vacancy concentration is propitious to domain switching. Copyright (C) EPLA, 2011
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页数：4
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