Ultrafast carrier dynamics in ZnO nanorods

被引：61
|
作者：
Sun, CK [1 ]
Sun, SZ
Lin, KH
Zhang, KYJ
Liu, HL
Liu, SC
Wu, JJ
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 117, Taiwan
[4] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 02期
关键词：
D O I：
10.1063/1.1989444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density. (c) 2005 American Institute of Physics.
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