Electrical behavior of Si/SiO2 nanocomposite films

被引：0
|
作者：
Iancu, V [1 ]
Jdira, L [1 ]
Draghici, M [1 ]
Mitroi, MR [1 ]
Balberg, I [1 ]
Ciurea, ML [1 ]
机构：
[1] Univ Politehn Bucuresti, Dept Phys, Bucharest 77206, Romania
来源：
2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2003年
关键词：
D O I：
10.1109/SMICND.2003.1251350
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical behavior of Si/SiO2 nanocomposite films is studied. The samples preparation is presented. Current-voltage and current-temperature characteristics are analyzed in the frame of a conduction model. The agreement between the experimental data and the fit is excellent.
引用
收藏
页码：83 / 86
页数：4
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