Ultralow-Power Radar Sensors for Ambient Sensing in the V-Band

被引:14
|
作者
Shopov, Stefan [1 ]
Girma, Mekdes G. [2 ]
Hasch, Juergen [3 ]
Cahoon, Ned [4 ]
Voinigescu, Sorin P. [1 ]
机构
[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] Robert Bosch GmbH, D-71272 Renningen, Germany
[3] Robert Bosch GmbH, Corp Res, RF Technol, Renningen, Germany
[4] GlobalFoundries, Business Dev SiGe & RFSOI Technol, Essex Jct, VT 05452 USA
关键词
Ambient sensing; CMOS; doppler sensor; Internet of Things (IoT); millimeter wave (mm-wave) radar; multichannel transceiver; SOI;
D O I
10.1109/TMTT.2017.2771261
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design considerations and circuit topologies of a family of ultralow-power fundamental-frequency and second-harmonic 60-GHz radar sensors are described. The single-chip sensor architecture features four low-noise-matched receivers, either a fundamental-frequency 60-GHz voltage-controlled oscillator (VCO) or 30-GHz VCO + doubler, and a static divide-by-8192 chain which is turned OFF 95% of the time to save DC power. On-die measurements show a power consumption of 42 mW from a single 1.2-V supply, 10% frequency tuning range, -104 to -108 dBc/Hz phase noise at 10-MHz offset, 10-dB conversion gain per receiver, and -7-dBm transmitter output power at the antenna pads. Several 45-nm SOI-CMOS sensor dies were flip-chip mounted on a 7x7 mm(2) flexible interposer which also includes four receive-and two transmit antennas. Doppler and direction of arrival tests were conducted over distances of several tens of centimeters.
引用
收藏
页码:5401 / 5410
页数:10
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