Transparent, high mobility of InGaZnO thin films deposited by PLD

被引：111
|
作者：
Suresh, Arun [1 ]
Gollakota, Praveen [1 ]
Wellenius, Patrick [1 ]
Dhawan, Anuj [1 ]
Muth, John F. [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 07期
关键词：
AOS; amorphous semiconductor; amorphous oxide semiconductor; IGZO; a-IGZO; PLD; mobility; transparent conducting oxide; TCO;
D O I：
10.1016/j.tsf.2007.03.153
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent oxide semiconductor, InGaZnO, thin films were prepared by pulsed laser deposition at room temperature. The carrier concentration was found to vary by several orders of magnitude from insulating to 10(19) carriers/cm(3) depending on the oxygen partial pressure during deposition. Hall mobilities as high as 16 cm(2)/V s were observed. This is approximately an order of magnitude higher than the mobility of amorphous silicon and indicates that InGaO3(ZnO)(x) with x <= 5 may be suitable for transparent, thin film transistor applications. Post-deposition annealing was found to strongly influence the carrier concentration while annealing effects on the electron mobility was less influential. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1326 / 1329
页数：4
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