Optical properties of silicon nanocrystalline thin films grown by pulsed laser deposition

被引:12
|
作者
Kim, JH [1 ]
Jeon, KA [1 ]
Kim, GH [1 ]
Lee, SY [1 ]
机构
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
关键词
D O I
10.1016/j.optmat.2004.08.050
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline silicon (nc-Si) thin films on silicon substrate have been prepared by using a pulsed laser deposition (PLD). The optical and structural properties of the films have been investigated as a function of deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence (PL) intensity abruptly decreased and peaks showed red shift. Annealing process can reduce the number of defect centers. Oxidation has considerable effects upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained due to three steps of growth, passivating defect centers, and isolation, sequentially. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:991 / 994
页数:4
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