Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

被引：77

作者：

Pu, Jiang ^{[1
]}

Kanahashi, Kaito ^{[1
]}

Nguyen Thanh Cuong ^{[2
]}

Chen, Chang-Hsiao ^{[3
]}

Li, Lain-Jong ^{[4
]}

Okada, Susumu ^{[5
,6
]}

Ohta, Hiromichi ^{[7
]}

Takenobu, Taishi ^{[1
,8
]}

机构：

[1] Waseda Univ, Dept Adv Sci & Engn, Tokyo 1698555, Japan

[2] Natl Inst Mat Sci, ICYS, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[4] Feng Chia Univ, Dept Automat Control Engn, Taichung 40724, Taiwan

[5] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[6] Univ Tsukuba, Grad Sch Pure & Appl Sci, Ibaraki 3058571, Japan

[7] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan

[8] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Tokyo 1690051, Japan

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 01期

基金：

日本学术振兴会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; QUANTUM-WELL STRUCTURES; SINGLE-CRYSTALS; THERMAL-CONDUCTIVITY; MOS2; TRANSISTORS; FIGURE; LAYERS; WS2;

D O I：

10.1103/PhysRevB.94.014312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.

引用

页数：8

共 50 条

[1] Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Li, Wenbin
Li, Ju
[J]. NATURE COMMUNICATIONS, 2016, 7
[2] Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayers
Wenbin Li
Ju Li
[J]. Nature Communications, 7
[3] Facile and controllable synthesis of Janus two-dimensional transition metal dichalcogenide monolayers
Zhang, Jing
Lou, Jun
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 255
[4] Exciton dynamics in transition metal dichalcogenide monolayers revealed by two-dimensional electronic spectroscopy
Guo, Liang
Monahan, Daniele
Fleming, Graham
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 253
[5] A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers
Zhong, Yang
Zhang, Lenan
Park, Ji-Hoon
Cruz, Samuel
Li, Long
Guo, Liang
Kong, Jing
Wang, Evelyn N.
[J]. SCIENCE ADVANCES, 2022, 8 (46)
[6] Two-dimensional exciton-polariton-light guiding by transition metal dichalcogenide monolayers
Khurgin, Jacob B.
[J]. OPTICA, 2015, 2 (08): : 740 - 742
[7] Effect of two-dimensional non-local screening on characteristics of transition metal dichalcogenide monolayers
Mughnetsyan, Vram
Manaselyan, Aram
Movsisyan, Ashot
Kirakosyan, Albert
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (04)
[8] Two-dimensional transition metal dichalcogenide (TMD) nanosheets
Chhowalla, Manish
Liu, Zhongfan
Zhang, Hua
[J]. CHEMICAL SOCIETY REVIEWS, 2015, 44 (09) : 2584 - 2586
[9] Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayers
Turunen, Mikko
Fernandez, Henry
Akkanen, Suvi-Tuuli
Seppanen, Heli
Sun, Zhipei
[J]. 2D MATERIALS, 2023, 10 (04)
[10] Excitonic Effects on Two-Dimensional Transition-Metal Dichalcogenide Monolayers: Impact on Solar Cell Efficiency
Dias, A. C.
Braganca, Helena
de Mendonca, Joao Paulo A.
Da Silva, Juarez L. F.
[J]. ACS APPLIED ENERGY MATERIALS, 2021, 4 (04): : 3265 - 3278

← 1 2 3 4 5 →