Dispersion of the quasi-confined optical phonons in wurtzite GaN/AlN mu quantum wells

被引:1
|
作者
Huang, Wen Deng [1 ]
Wei, Shu Yi [2 ]
Ren, Ya Jie [1 ]
Wang, Ya Hui [1 ]
机构
[1] Shaanxi Univ Technol, Dept Phys, Hanzhong 723001, Shaanxi, Peoples R China
[2] Henan Normal Univ, Coll Phys & Informat Engn, Xinxiang 453007, Henan, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
phonons; quantum wells; phonon states and bands; normal modes; phonon dispersion;
D O I
10.1142/S0217979207037843
中图分类号
O59 [应用物理学];
学科分类号
摘要
Within the framework of the dielectric-continuum model and Loudon's uniaxial crystal model, the dispersions of the quasi-confined optical phonons in arbitrary wurtzite multiplelayer heterostructures are solved by using the transfer-matrix method. The dispersion relations of the quasi-confined phonons are investigated for GaN/AIN single QW and coupled QWs. The confinement of the quasi-confined phonons leads to a quantization of q(z,j) characterized by an integer m that defines the order of corresponding quasi-confined modes. The quasi-confined modes are more dispersive for decreasing m (i.e., for decreasing q(z,j), the bands formed by the dispersion curves are narrower for higher order quasi-confined modes. The strain effect of QW structures has a clear influence on the dispersion behavior of the quasi-confined phonon modes and improves the frequency of the quasi-confined phonons.
引用
收藏
页码:4407 / 4418
页数:12
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