Atomic layer deposition of CuxS

被引：3

作者：

Reijnen, L ^{[1
]}

Meester, B ^{[1
]}

Goossens, A ^{[1
]}

Schoonman, J ^{[1
]}

机构：

[1] Inorgan Chem Lab, NL-2628 Delft, Netherlands

来源：

JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期

关键词：

D O I：

10.1051/jp4:20013138

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thin films of CuxS have been deposited by atomic layer deposition using copper(II) bis-tetramethylheptanedionate (Cu(thd)(2)) and hydrogen sulphide (H2S) as precursors. Self-limiting growth was obtained between 125 degreesC and 250 degreesC at a pressure of 2 mbar. Dependent on the temperature different crystalline phases formed. Below 175 degreesC CuS (covellite) was obtained, while between 175 degreesC and 300 degreesC Cu1.8S (digenite) was deposited. The growth rate per cycle correlated to the deposited crystalline phase, the Cu(thd)(2) pulse length, and the reactor pressure. Typical growth rates were 0.15 Angstrom/cycle for Cu1.8S and 0.4 Angstrom/cycle for CuS. It appears that the process is determined by Cu(thd)(2) adsorption. Films were polycrystalline and consisted of 100 nm particles that grow in columns perpendicular to the surface.

引用

页码：1103 / 1107

页数：5

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