Effects of classical and quantum charge fluctuations on sequential electron tunneling in multiple quantum wells

被引:4
|
作者
Huang, DH [1 ]
Cardimona, DA [1 ]
机构
[1] USAF, Res Lab, VSSS, Kirtland AFB, NM 87117 USA
关键词
D O I
10.1063/1.1594815
中图分类号
O59 [应用物理学];
学科分类号
摘要
A previous theory [M. Ershov et al., Appl. Phys. Lett. 67, 3147 (1995)] for studying the distribution of nonuniform fields in multiple-quantum-well photodetectors under an ac voltage is generalized to include nonadiabatic space-charge-field effects. From numerical results calculated by the generalized theory, it is found that field-domain effects are only important at high temperatures or high voltages, where both injection and sequential-tunneling currents are expected to be large. On the other hand, field-domain effects become negligible at low temperatures and low voltages, but nonadiabatic effects included in this extended theory are enhanced for small sequential-tunneling currents. The time duration for nonadiabatic effects is determined by the quantum capacitance. By using the generalized theory, a differential capacitance is calculated for a non-steady state, and a negative conduction current is predicted under a positive voltage in this case due to charge accumulation around the collecting contact.
引用
收藏
页码:3703 / 3711
页数:9
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