WOBTree: a write-optimized B plus -tree for non-volatile memory

被引:1
|
作者
Wang, Haitao [1 ,2 ,3 ]
Li, Zhanhuai [1 ,2 ,3 ]
Zhang, Xiao [1 ,2 ,3 ]
Zhao, Xiaonan [1 ,2 ,3 ]
Jiang, Song [4 ]
机构
[1] Northwestern Polytech Univ, Sch Comp Sci & Engn, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, Key Lab Big Data Storage & Management, Minist Ind & Informat Technol, Xian 710072, Peoples R China
[3] Natl Engn Lab Integrated Aerosp Ground Ocean Big, Xian 710072, Peoples R China
[4] Univ Texas Arlington, Dept Comp Sci & Engn, Arlington, TX 76010 USA
基金
中国国家自然科学基金;
关键词
non-volatile memory; B plus -tree; atomic granularity mismatch; write amplification; performance optimization;
D O I
10.1007/s11704-020-0228-1
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The emergence of non-volatile memory (NVM) has introduced new opportunities for performance optimizations in existing storage systems. To better utilize its byte-addressability and near-DRAM performance, NVM can be attached on the memory bus and accessed via load/store memory instructions rather than the conventional block interface. In this scenario, a cache line (usually 64 bytes) becomes the data transfer unit between volatile and non-volatile devices. However, the failure-atomicity of write on NVM is the memory bit width (usually 8 bytes). This mismatch between the data transfer unit and the atomicity unit may introduce write amplification and compromise data consistency of node-based data structures such as B+-trees. In this paper, we propose WOBTree, a Write-Optimized B+-Tree for NVM to address the mismatch problem without expensive logging. WOBTree minimizes the update granularity from a tree node to a much smaller subnode and carefully arranges the write operations in it to ensure crash consistency and reduce write amplification. Experimental results show that compared with previous persistent B+-tree solutions, WOBTree reduces the write amplification by up to 86x and improves write performance by up to 61x while maintaining similar search performance.
引用
收藏
页数:15
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