ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage Operation (vol 7, pg 6383, 2015)

被引：0
|
作者：
Sun, Chergn-En
Chen, Chin-Yu
Chu, Ka-Lip
Shen, Yung-Shao
Lin, Chia-Chun
Wu, Yung-Hsien
机构：
来源：
ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 18期
关键词：
D O I：
10.1021/acsami.5b03117
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
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页码：10067 / 10067
页数：1
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