High-brightness 9xx and 14xx single-mode emitter array laser bars

被引:2
|
作者
Lichtenstein, N [1 ]
Manz, Y [1 ]
Mauron, P [1 ]
Fily, A [1 ]
Schmidt, B [1 ]
Müller, J [1 ]
Pawlik, S [1 ]
Sverdlov, B [1 ]
Weiss, S [1 ]
Thies, A [1 ]
Harder, C [1 ]
机构
[1] Bookham Switzerland AG, CH-8045 Zurich, Switzerland
关键词
semiconductor; laser diode bar; AlGaAs; high-power; single-mode; brightness; AuSn; solid state laser; pumping; fiber coupling;
D O I
10.1117/12.590049
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this communication we report on the successful realization of Single-mode Emitter Array Laser (SEAL) bars. Various laser bars with a cavity length of 2.4 mm containing between 25 to 350 narrow stripe lateral single-mode emitters have been realized and mounted epi-side down onto expansion matched heatsinks using a stable AuSn-solder technology. Optical power in excess of 1 W per emitter has been obtained resulting in more than 200 W total output power for the highest emitter density. While these total power levels are comparable to conventional broad-area laser bars (BALB), the brightness of each of the emitters is drastically improved over the BALB approach making theses bars ideal candidates for beam-shaping concepts. Lateral farfield measurements with smooth gaussian patterns, high electro-optical conversion efficiency well above 60% and threshold currents as low as 0.5 A are presented. Similar devices realized from the InGaAsP / InP material system deliver in excess of 20 W from 100 NS emitters at wavelengths around 1480 run.
引用
收藏
页码:101 / 108
页数:8
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