X-ray Induced Valence Change and Vacuum Referred Binding Energies of Bi3+ and Bi2+ in Li2BaP2O7

被引:38
|
作者
Awater, Roy H. P. [1 ]
Dorenbos, Pieter [1 ]
机构
[1] Delft Univ Technol, Luminescence Mat Res Grp FAME LMR, Dept Radiat Sci & Technol, Fac Sci Appl, NL-2629 JB Delft, Netherlands
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2016年 / 120卷 / 28期
关键词
LIGHT-EMITTING DIODES; RED PHOSPHOR; LUMINESCENCE; BISMUTH; EMISSION; PHOTOLUMINESCENCE; DEPENDENCE; CENTERS; BI-3; ION;
D O I
10.1021/acs.jpcc.6b05312
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bismuth-doped Li2BaP2O7 was prepared in air, showing no Bi3+ or Bi2+ related photoluminescence even at 10 K. Absorption measurements showed that only Bi3+ was present in the as-prepared samples of which the emission is completely quenched. During X-ray excitation the characteristic deep-red radioluminescence of Bi2+ was observed. After X-ray irradiation, this red luminescence of Bi2+ could be excited optically, indicating that upon X-ray irradiation the Bi3+ is reduced to Bi2+. Based on the spectroscopic results, the Bi3+ and Bi2+ energy levels were estimated in a vacuum referred binding energy (VRBE) scheme and were used to explain the observed luminescence behavior. The VRBE scheme provided an interpretation for the commonly observed Bi3+ pair emission in bismuth-doped compounds. In the case of Li2BaP2O7:Bi it was used to explain the self-quenching behavior of Bi3+. These findings show that is possible to initially dope compounds with Bi3+ ions while only radioluminescence is observed from Bi2+ when the sample is exposed to high-energy excitation. This phenomenon can be used to fabricate new types of luminescent materials.
引用
收藏
页码:15114 / 15118
页数:5
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