A 400 μW, 4.7-6.4GHz VCO under an Above-IC inductor in 45nm CMOS

被引：0
|
作者：
Borremans, Jonathan [1 ,2 ]
Carchon, Geert [1 ]
Wambacq, Piet [1 ,2 ]
Kuijk, Maarten [2 ]
Muller, Philippe [1 ]
Soussan, Phlippe [1 ]
Decoutere, Stefaan [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium
[2] Vrije Univ Brussel, B-1050 Brussels, Belgium
来源：
58TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/ECTC.2008.4549964
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A 4.7-to-6.4GHz VCO is designed in 45nm bulk CMOS using an Above-IC inductor on top of the active circuitry, yielding 28% area reduction. The inductor is shielded from the circuitry, using the top metal layers of the CMOS back-end, which enables the proposed 3D integration for low-cost performance extension. The fully integrated VCO consumes just 400 mu W, achieves a FoM of 185dB, and occupies and area of only 0.12mm2.
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页码：164 / +
页数：2
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