Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells

The binding energy of an exciton screened by the electron-hole plasma in a wurtzite GaN/InxGa1-xN quantum well (in the case of 0.1 < x < 1 within which the interface phonon modes play a dominant role) is calculated including the exciton-phonon interaction by a variational method combined with a self-consistent procedure. The coupling between the exciton and various longitudinal-like optical phonon modes is considered to demonstrate the polaronic effect which strongly depends on the exciton wave function. All of the built-in electric field, the exciton-phonon interaction and the electronhole plasma weaken the Coulomb coupling between an electron and a hole to reduce the binding energy since the former separates the wave functions of the electron and hole in the z direction and the later two enlarge the exciton Bohr radius. The electron-hole plasma not only restrains the built-in electric field, but also reduces the polaronic effect to the binding energy.