Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry

被引：0
|
作者：
Liu, X. [1 ]
Kim, I. -K. [2 ]
Aspnes, D. E. [1 ]
机构：
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[2] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 5 | 2008年 / 5卷 / 05期
关键词：
D O I：
10.1002/pssc.200777896
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We use a real-time spectroscopic polarimeter integrated with an organometallic chemical vapor deposition system to investigate growth of GaP on Si, and particularly nanoscopically roughened (nr-)Si. We find nanoroughening is necessary to increase the density of nucleation sites and decrease reactant mobility and thereby grow continuous films instead of widely spaced islands. The nrSi surfaces are more highly reactive to the trimethylgallium precursor than III-V growth surfaces, leading to the appearance of metallic Ga if standard growth conditions are used in the initial phase of heteroepitaxy.
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页码：1312 / +
页数：2
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