共 50 条
- [1] Virtual reactor: A new tool for SiC bulk crystal growth study and optimization SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 57 - 60
- [4] Optimization of sublimation growth of SiC bulk crystals using modeling Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 61 : 107 - 112
- [5] Optimization of sublimation growth of SiC bulk crystals using modeling MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 107 - 112
- [6] Modeling and experimental verification of SiC M-PVT bulk crystal growth SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 75 - 78
- [7] Modeling of PVT growth of bulk SiC crystals:: general trends and 2" to 4" reactor scaling NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION, 2000, 616 : 227 - 233
- [8] Silicon Carbide Bulk Crystal Growth Modeling from Atomic Scale to Reactor Scale GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, 50 (03): : 119 - 126
- [10] Role of temperature gradient in bulk crystal growth of SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 79 - 82