Electrodynamics of Topologically Ordered Quantum Phases in Dirac Materials

被引:3
|
作者
Hussien, Musa A. M. [1 ]
Ukpong, Aniekan Magnus [1 ]
机构
[1] Univ KwaZulu Natal, Theoret & Computat Condensed Matter & Mat Phys Gr, Sch Chem & Phys, Coll Agr Engn & Sci, ZA-3201 Pietermaritzburg, South Africa
基金
新加坡国家研究基金会;
关键词
topological quantum phase transitions; collective excitation; nanoline; charge density wave; Chern number; LIGHT-INDUCED SUPERCONDUCTIVITY; DENSITY-FUNCTIONAL THEORY; BLOCH ELECTRONS; MAGNETIC-FIELD; RENORMALIZATION; DRIVEN; STATES; MODEL;
D O I
10.3390/nano11112914
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
First-principles calculations of the electronic ground state in tantalum arsenide are combined with tight-binding calculations of the field dependence of its transport model equivalent on the graphene monolayer to study the emergence of topologically ordered quantum states, and to obtain topological phase diagrams. Our calculations include the degrees of freedom for nuclear, electronic, and photonic interactions explicitly within the quasistatic approximation to the time-propagation-dependent density functional theory. This field-theoretic approach allows us to determine the non-linear response of the ground state density matrix to the applied electromagnetic field at distinct quantum phase transition points. Our results suggest the existence of a facile electronic switch between trivial and topologically ordered quantum states that may be realizable through the application of a perpendicular electric or magnetic field alongside a staggered-sublattice potential in the underlying lattice. Signatures of the near field electrodynamics in nanoclusters show the formation of a quantum fluid phase at the topological quantum phase transition points. The emergent carrier density wave transport phase is discussed to show that transmission through the collective excitation mode in multilayer heterostructures is a unique possibility in plasmonic, optoelectronic, and photonic applications when atomic clusters of Dirac materials are integrated within nanostructures, as patterned or continuous surfaces.
引用
收藏
页数:28
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