FAILURE MODE ANALYSIS OF AL2O3-PARYLENE C BILAYER ENCAPSULATION FOR IMPLANTABLE DEVICES AND APPLICATION TO PENETRATING NEURAL ARRAYS

被引：0
|
作者：
Caldwell, R. [1 ]
Rieth, L. [2 ]
Xie, X. [2 ]
Sharma, R. [2 ]
Solzbacher, F. [1 ,2 ,3 ]
Tathireddy, P. [2 ,3 ]
机构：
[1] Univ Utah, Dept Bioengn, Salt Lake City, UT 84112 USA
[2] Univ Utah, Dept Elect Engn, Salt Lake City, UT 84112 USA
[3] Blackrock Microsyst, Salt Lake City, UT USA
来源：
2015 TRANSDUCERS - 2015 18TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2015年
关键词：
Neural interface; encapsulation; parylene C; atomic layer deposition; aluminum oxide; impedance spectroscopy;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We assess the performance of a parylene C - aluminum oxide bilayer encapsulation strategy as it applies to implantable devices with non-planar topography. Electrochemical measurements of devices subject to in vitro accelerated lifetime testing are analyzed to evaluate benefits of bilayer encapsulation versus parylene C alone. Failure modes associated with device features and topographies are identified and solutions are presented that promote stability of device impedances.
引用
收藏
页码：1747 / 1750
页数：4
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