Modeling litho-constrained design layout

被引:4
|
作者
Tsai, Min-Chun [1 ]
Zhang, Daniel [1 ]
Tang, Zongwu [1 ]
机构
[1] Synopsys ATG, Mountain View, CA 94043 USA
关键词
OPC; DFM; lithography; yield; design rules; modeling;
D O I
10.1109/DAC.2007.375186
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
This paper derived a method of modeling litho-constrained layout in design stage. The model applies directly on design layout and does not require mask-synthesis steps. Results show we can capture design-relevant litho "hot-spots" within a matter of an hour on a large full-chip data. This method proves that the hot-spot information is embedded in original design layout and can be extracted with strong signal. This method enables a designer to correct real hot-spots before tape-out. It provides a mechanism to quantify the sensitivity of layout configuration to lithography printability and to guide OPC to focus on litho-sensitive regions.
引用
收藏
页码:354 / +
页数:2
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