High-frequency micro-machined power inductors

被引:30
|
作者
Wang, N [1 ]
O'Donnell, T [1 ]
Roy, S [1 ]
Brunet, M [1 ]
McCloskey, P [1 ]
O'Mathuna, SC [1 ]
机构
[1] NMRC, Cork, Ireland
关键词
micro-machined; power inductor; high frequency;
D O I
10.1016/j.jmmm.2004.11.434
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 n.H. The DC saturation currents of the non-gapped and gapped inductors are similar to 500 and 700mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:1347 / 1350
页数:4
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