Multilevel resistive switching in Cu and Ag doped CBRAM device

被引：6

作者：

Zhang, Bo ^{[1
]}

Zima, Vitezslav ^{[2
]}

Mikysek, Tomas ^{[3
]}

Podzemna, Veronika ^{[4
]}

Rozsival, Pavel ^{[5
]}

Wagner, Tomas ^{[1
,4
]}

机构：

[1] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic

[2] Inst Macromol Chem AS CR, Heyrovskeho Nam 2, Prague 16206 6, Czech Republic

[3] Univ Pardubice, Fac Chem Technol, Dept Analyt Chem, Studentska 573, Pardubice 53210, Czech Republic

[4] Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53210, Czech Republic

[5] Univ Pardubice, Fac Elect Engn & Informat, Dept Elect Engn, Nam Cs Legii 565, Pardubice 53210, Czech Republic

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 19期

关键词：

MEMORIES;

D O I：

10.1007/s10854-018-9778-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as "one pulse SET method". The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.

引用

页码：16836 / 16841

页数：6

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