Multilevel resistive switching in Cu and Ag doped CBRAM device

被引：6

作者：

Zhang, Bo ^{[1
]}

Zima, Vitezslav ^{[2
]}

Mikysek, Tomas ^{[3
]}

Podzemna, Veronika ^{[4
]}

Rozsival, Pavel ^{[5
]}

Wagner, Tomas ^{[1
,4
]}

机构：

[1] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic

[2] Inst Macromol Chem AS CR, Heyrovskeho Nam 2, Prague 16206 6, Czech Republic

[3] Univ Pardubice, Fac Chem Technol, Dept Analyt Chem, Studentska 573, Pardubice 53210, Czech Republic

[4] Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53210, Czech Republic

[5] Univ Pardubice, Fac Elect Engn & Informat, Dept Elect Engn, Nam Cs Legii 565, Pardubice 53210, Czech Republic

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 19期

关键词：

MEMORIES;

D O I：

10.1007/s10854-018-9778-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as "one pulse SET method". The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.

引用

页码：16836 / 16841

页数：6

共 50 条

[1] Multilevel resistive switching in Cu and Ag doped CBRAM device
Bo Zhang
Vitezslav Zima
Tomas Mikysek
Veronika Podzemna
Pavel Rozsival
Tomas Wagner
[J]. Journal of Materials Science: Materials in Electronics, 2018, 29 : 16836 - 16841
[2] Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device
Liu, Lifeng
Yu, Di
Ma, Wenjia
Chen, Bing
Zhang, Feifei
Gao, Bin
Kang, Jinfeng
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)
[3] Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device
Chand, Umesh
Berco, Den
Li, Ren
Alawein, Meshal
Fariborzi, Hossein
[J]. 2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018), 2018, : 217 - 219
[4] A Cu/ZnO Nanowire/Cu Resistive Switching Device
Lijie Li
Yan Zhang
Zhengjun Chew
[J]. Nano-Micro Letters, 2013, 5 (03) : 159 - 162
[5] A Cu/ZnO Nanowire/Cu Resistive Switching Device
Lijie Li
Yan Zhang
Zhengjun Chew
[J]. Nano-Micro Letters, 2013, (03) : 159 - 162
[6] A Cu/ZnO Nanowire/Cu Resistive Switching Device
Lijie Li
Yan Zhang
Zhengjun Chew
[J]. Nano-Micro Letters, 2013, 5 : 159 - 162
[7] A Cu/ZnO Nanowire/Cu Resistive Switching Device
Li, Lijie
Zhang, Yan
Chew, Zhengjun
[J]. NANO-MICRO LETTERS, 2013, 5 (03) : 159 - 162
[8] Interconversion of complementary resistive switching from graphene oxide based bipolar multilevel resistive switching device
Pal, Parthasarathi
Wang, Yeong Her
[J]. APPLIED PHYSICS LETTERS, 2020, 117 (05)
[9] Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device
Sun, Haitao
Liu, Qi
Long, Shibing
Lv, Hangbing
Banerjee, Writam
Liu, Ming
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (15)
[10] Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device
20144400144320
[J]. Liu, Qi, 1600, American Institute of Physics Inc. (116):

← 1 2 3 4 5 →