Wordline voltage generating system for low-power low-voltage flash memories

被引：20
|
作者：
Tanzawa, T [1 ]
Umezawa, A
Kuriyama, M
Taura, T
Banba, H
Miyaba, T
Shiga, H
Takano, Y
Atsumi, S
机构：
[1] Toshiba Corp Semicond Co, Mem LSI Res & Dev Ctr, Yokohama, Kanagawa 2478585, Japan
[2] Toshiba Corp Semicond Co, Mem Div, Yokohama, Kanagawa 2478585, Japan
[3] Toshiba Microelect Corp, Yokohama, Kanagawa 2478585, Japan
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2001年 / 36卷 / 01期
关键词：
flash memories; low power; low-voltage operation; stand-by current; voltage generator;
D O I：
10.1109/4.896229
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-power wordline voltage generating system is developed for low-voltage flash memories, The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage generator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory Fabricated with a 0.25-mum flash memory process and achieved with very low stand-by current of 2 muA typically, and high operating frequency of 25 MHz in read operation at 1.8 V, A low-voltage level shifter with high-speed switching is also proposed.
引用
收藏
页码：55 / 63
页数：9
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