IMPLEMENTATION OF VERILOGA GAN HEMT MODEL TO DESIGN RF SWITCH

被引：4
|
作者：
Majumdar, Shubhankar [1 ]
Bag, Ankush [1 ]
Biswas, Dhrubes [2 ]
机构：
[1] Indian Inst Technol, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2015年 / 57卷 / 07期
关键词：
GaN HEMT; VerilogA model; RF switch; isolation and insertion loss; look up table; LARGE-SIGNAL MODEL;
D O I：
10.1002/mop.29152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN HEMT model has been implemented in designing of RF switch through VerilogA. The VerilogA model is formed by experimental data as obtained from DC and RF characteristics of the HEMT. A look-up-table based VerilogA model has been prepared to simulate the RF switch in Cadence's spectre. The simulated value of the switch property i.e. isolation and insertion loss is found to be -40 dB to -35 dB and -0.5 dB to -2.5 dB, respectively in the 0.5-2.5 GHz frequency range. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1765-1768, 2015
引用
收藏
页码：1765 / 1768
页数：4
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