CMOS monolithic pixel sensors research and development at LBNL

被引：4
|
作者：
Contarato, D. [1 ]
Bussat, J-M [1 ]
Denes, P. [1 ]
Greiner, L. [1 ]
Kim, T. [1 ]
Stezelberger, T. [1 ]
Wieman, H. [1 ]
Battaglia, M. [1 ,2 ]
Hooberman, B. [1 ,2 ]
Tompkins, L. [2 ]
机构：
[1] Lawrence Berkely Natl Lab, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
来源：
PRAMANA-JOURNAL OF PHYSICS | 2007年 / 69卷 / 06期
关键词：
silicon pixel detectors; CMOS; monolithic pixel sensors;
D O I：
10.1007/s12043-007-0213-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS pixel sensors are also reported, and future plans and activities are discussed.
引用
收藏
页码：963 / 967
页数：5
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