GaAs nanolayers obtained by pulsed cooling of a saturated fluxed melt

被引：1
|
作者：
Maronchuk, IE [1 ]
Maronchuk, AI [1 ]
Shorokhov, AV [1 ]
机构：
[1] Kherson Ind Inst, Kherson, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 09期
关键词：
GaAs; Quantum Yield; High Quantum; High Quantum Yield; Saturated Flux;
D O I：
10.1134/1.1261658
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new method is proposed for obtaining nanolayers. The method is based on pulsed cooling of a saturated fluxed melt. The layers obtained were investigated with the aid of photoluminescence. The results show a high quantum yield of luminescence and therefore high quality of the layers grown. (C) 1997 American Institute of Physics.
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收藏
页码：692 / 693
页数：2
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