Formation of silicon dioxide layers during UV annealing of tantalum pentoxide film

被引：9

作者：

Zhang, JY ^{[1
]}

Boyd, IW ^{[1
]}

机构：

[1] UCL, London WC1E 7JE, England

来源：

APPLIED SURFACE SCIENCE | 2000年 / 168卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

photo-CVD; excimer lamp; Ta(2)O(5); low temperature UV annealing; high dielectric constant;

D O I：

10.1016/S0169-4332(00)00770-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, the effects of ultraviolet (UV) annealing on films deposited by photo-induced chemical vapour deposition (photo-CVD) have been investigated using ellipsometry and Fourier transform infrared spectroscopy (FTIR) measurements. It was found that SiO(2) could be formed at UV annealing temperatures above 350 degreesC and its thickness (several nm) depends on annealing time, temperature and annealing gas such as N(2) and O(2) as well as the Ta(2)O(5) thickness. X-ray photoelectron spectroscopy (XPS) and HF etching confirmed that the SiO(2) formed on the surface of the Ta(2)O(5) after the UV annealing step. Results show that the active oxygen species play an important role in the improvement of layer properties during UV annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：312 / 315

页数：4

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