Ultra-Wideband Silicon On-chip Antennas with Artificial Dielectric Layer

被引：2

作者：

Takahagi, Kazuhiro ^{[1
]}

Ohno, Masaki ^{[1
]}

Ikebe, Masayuki ^{[1
]}

Sano, Eiichi ^{[1
]}

机构：

[1] Hokkaido Univ, Sapporo, Hokkaido 0608628, Japan

来源：

2009 INTERNATIONAL SYMPOSIUM ON INTELLIGENT SIGNAL PROCESSING AND COMMUNICATION SYSTEMS (ISPACS 2009) | 2009年

关键词：

INTEGRATED ANTENNAS;

D O I：

10.1109/ISPACS.2009.5383895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On-chip antennas are demanded to further lower the cost of wireless CMOS ICs. We placed an artificial dielectric layer (ADL) between an antenna and Si substrate to improve the antenna gain. A 3.1-10.6-GHz ultra-wideband inverted-F antenna with ADL as well as a low-noise amplifier were designed and fabricated using a 0.18-mu m mixed signal/RF CMOS process with one poly and six metal layers. A fairly good agreement between measured and calculated gain characteristics was obtained. Using the ADL achieved a 2-dB gain enhancement. Increasing the surface dielectric constant for the ADL is expected to further enhance gain.

引用

页码：81 / 84

页数：4

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