A Novel SONOS Gate Power MOSFET With Excellent UIS Capability

被引：7
|
作者：
Zhou, Xianda [1 ]
Ng, Jacky C. W. [1 ]
Sin, Johnny K. O. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 10期
关键词：
Avalanche energy; power MOSFET; silicon-oxide-nitride-oxide-silicon (SONOS); threshold voltage; unclamped inductive switching (UIS);
D O I：
10.1109/LED.2011.2158059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel silicon-oxide-nitride-oxide-silicon gate power MOSFET is proposed and experimentally demonstrated. In the novel device, the doping concentration of the p-body is increased by an order of magnitude compared to that of the conventional power MOSFET. However, the positive shift of the threshold voltage due to the heavily doped p-body is fully compensated by the positive fixed charges preprogrammed in the silicon nitride of the oxide-nitride-oxide gate dielectric. As a result, a normal threshold voltage can be obtained, and the avalanche energy absorption of the novel device at unclamped inductive switching is 5.2 times that of the conventional power MOSFET.
引用
收藏
页码：1415 / 1417
页数：3
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