Silicon diffused diodes with nearly ideal current-voltage characteristics

被引：0
|
作者：
Boltovets, NS [1 ]
Ismailov, KA [1 ]
Konakova, RV [1 ]
Tagaev, MB [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine
来源：
TECHNICAL PHYSICS | 1998年 / 43卷 / 10期
关键词：
Silicon; Dose Range; Transfer Mechanism; Saturation Current; Current Transfer;
D O I：
10.1134/1.1259167
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that nearly ideal current-voltage characteristics (I-V curves) can be obtained for small-area,; shallow silicon diffused p-n junctions irradiated with Co-60 gamma rays in the dose range 10(3)-5 x 10(5) Gy. In the irradiated diodes the current transfer mechanism is observed to shift from generation-recombination to diffusion. The nonideality factor on the forward branch of the I-V curve decreases from 1.68 in the unirradiated diode to 1.17 in a diode irradiated to a dose of 5 x 10(5) Gy. A saturation current is observed on the reverse branch of the I-V curves of irradiated diodes at room temperature. (C) 1998 American institute of Physics. [S1063-7842(98)02510-0].
引用
收藏
页码：1257 / 1258
页数：2
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