Salicidation issue in 65nm technology development

被引：0
|
作者：
Tan, H. [1 ]
Tan, P. K. [1 ]
Hendarto, E. [1 ]
Toh, S. L. [1 ]
Wang, Q. F. [1 ]
Cai, J. L. [1 ]
Deng, Q. [1 ]
Ng, T. H. [1 ]
Goh, Y. W. [1 ]
Mai, Z. H. [1 ]
Lam, J. [1 ]
机构：
[1] Chartered Semicond Mfg Ltd, Technol Dev Dept, 60 Woodlands St 2,Ind Pk D, Singapore 738406, Singapore
来源：
IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
NiSi has replaced COSi2 as the salicide material for 65nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by physical and electrical failure analysis techniques.
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页码：44 / +
页数：2
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