The influence of shallow donor and acceptor states on carriers' lifetime in long wavelength HgCdTe infrared detectors

被引：3

作者：

Jozwikowski, Krzysztof ^{[1
]}

Jozwikowska, Alina ^{[2
]}

机构：

[1] Mil Univ Technol, Inst Mat Sci & Engn, Kaliskiego 2 St, PL-00908 Warsaw, Poland

[2] Warsaw Univ Life Sci, Fac Appl Informat & Math, Nowoursynowska 166 St, PL-02787 Warsaw, Poland

来源：

INFRARED PHYSICS & TECHNOLOGY | 2021年 / 117卷

关键词：

Long wavelength HgCdTe structures; Recombination via donor and acceptors states; Minority and majority carrier lifetime; GENERATION-RECOMBINATION PROCESSES; RADIATIVE LIFETIME; SEMICONDUCTORS; PHOTODIODES;

D O I：

10.1016/j.infrared.2021.103853

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of various recombination mechanisms in long-wavelength n-type HgCdTe structures on the lifetime of optically excited minority and majority carriers in a wide temperature range was analyzed. It has been shown that considering recombination involving shallow impurity states makes it possible to explain the dependence of minority carriers' lifetime on temperature without assigning too much importance to the SRH processes related to mercury vacancies.

引用

页数：15

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