BaTiO3/SrTiO3 thin films grown by an MBE method using oxygen radicals

被引：6
|
作者：
Shigetani, H
Fujimoto, M
Sugimura, W
Matsui, Y
Tanaka, J
机构：
[1] WASEDA UNIV,TOKYO 169,JAPAN
[2] NATL INST RES INORGAN MAT,IBARAKI,OSAKA 305,JAPAN
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 41卷 / 01期
关键词：
thin films; X-ray diffraction; lattice;
D O I：
10.1016/S0921-5107(96)01642-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
BaTiO3(BTO) thin films were grown by an MBE method using an oxygen radical source. BaO and TiO2 layers were alternately deposited on a SrTiO3 (001) substrate (STO), and the structure of the thin film obtained was evaluated by X-ray diffraction, reflection high energy electron diffraction and transmission electron microscopy. The BTO thin films were epitaxially grown and oriented in the (001) direction. The lattice constants of the thin film varied with distance from the interface of BTO and STO. Near the interface, the a-value was shorter than that for bulk BTO while the c-value was longer than that for bulk BTO.
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页码：148 / 151
页数：4
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