Temperature dependence of nonequilibrium transport time of electrons in bulk GaAs investigated by time-domain terahertz spectroscopy

被引:8
|
作者
Zhu, Y. M. [1 ,2 ]
Chen, L.
Peng, Y.
Yuan, M. H.
Wen, Y.
Zhuang, S. L.
机构
[1] Shanghai Univ Sci & Technol, Engn Res Ctr Opt Instrument & Syst, Minist Educ, Shanghai 200093, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Microelect, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
MONTE-CARLO; CARRIER TRANSPORT; SEMICONDUCTORS;
D O I
10.1063/1.3610472
中图分类号
O59 [应用物理学];
学科分类号
摘要
By using free space terahertz electro-optic sampling technique, the terahertz (THz) waveforms emitted from intrinsic bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields at various temperatures were recorded. We clearly observe the velocity of electrons exhibits a pounced overshoot behavior. The nonequiliburm transport time of electrons, tau(epsilon), has been obtained from the THz waveforms. From the temperature dependence of tau(epsilon), we find that tau(epsilon) is governed by the polar scattering process of electrons in Gamma valley via longitudinal opticalphonon emissions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610472]
引用
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页数:3
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