Deducing the properties of CdZnTe wafers by IR transmission

被引：0

作者：

Li, GQ ^{[1
]}

Jie, WQ ^{[1
]}

Hua, H ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2003年 / 22卷 / 06期

关键词：

IR transmission; absorption mechanism; dislocation density; resistivity; CdZnTe;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Several Cd0.9Zn0.1Te wafers with different properties are characterized by FTIR transmission. It is found that the IR transmission can be used qualitatively to deduce the quality of the Cd0.9Zn0.1Te wafers. The wafers with higher transmission have homogenized concentration distribution, lower dislocation density, and higher resistivity. According to the variation of IR transmission with wavenumber, IR transmission spectra can be classified into four types with different qualities. These results are initially analyzed based on the mechanism of Cd0.9Zn0.1Te IR absorption.

引用

页码：469 / 472

页数：4

共 8 条

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