Nitrogen-doped ZnO obtained by nitrogen plasma treatment

被引：8
|
作者：
Wang, Dengkui [1 ,2 ]
Zhao, Dongxu [1 ]
Wang, Fei [1 ,2 ]
Yao, Bin [3 ]
Shen, Dezhen [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130021, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
[3] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 04期
基金：
中国国家自然科学基金;
关键词：
nitrogen plasma treatment; photoluminescence; single crystals; work function; zinc oxide; MODES;
D O I：
10.1002/pssa.201431779
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We carried out a nitrogen plasma treatment process to obtain N-doped ZnO single crystal. The treated sample showed an acceptor related emission located at 3.354 eV when excited by a 325-nm He-Cd laser at 85 K. Raman spectra revealed the formation of a bond between Zn and N atoms. The surface work function indicated increasing of hole concentration of the N-plasma-treated ZnO. By constructing a ZnO-based homojunction, the I-V curve displayed perfect rectification performance.
引用
收藏
页码：846 / 850
页数：5
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